Tetraethoxysilane (TEOS), with the CAS number 78 - 10 - 4, is a colorless, flammable liquid. It has a molecular formula of C₈H₂₀O₄Si and a molecular weight of 208.33 g/mol. TEOS has a boiling point of 168.1 °C at 760 mmHg and a density of 0.933 g/mL at 25 °C. It is soluble in organic solvents such as ethanol, benzene, and chloroform but reacts with water to form silica and ethanol. The purity of our factory - supplied TEOS can reach up to 99% or higher, ensuring high - quality performance in various applications.
Tetraethoxysilane has a wide range of applications in different industries. In the field of materials science, it is a key precursor for the synthesis of silica - based materials. For example, it can be used to prepare silica gels, which have excellent adsorption properties and are widely used in the purification of gases and liquids. In the semiconductor industry, TEOS is used in chemical vapor deposition (CVD) processes to deposit silicon dioxide thin films on semiconductor wafers. These thin films are essential for the insulation and protection of semiconductor devices. In the field of coatings, TEOS can be used to improve the hardness, scratch resistance, and chemical resistance of coatings. It can also be used in the preparation of sol - gel coatings for glass and metal surfaces, providing excellent anti - corrosion and anti - reflection properties.
When using tetraethoxysilane, it is important to follow proper safety procedures. Wear appropriate personal protective equipment, including safety glasses, gloves, and a lab coat. TEOS should be stored in a cool, dry, and well - ventilated place away from sources of ignition. In a chemical synthesis process, TEOS is usually hydrolyzed in the presence of an acid or a base catalyst. The hydrolysis reaction can be controlled by adjusting the reaction conditions such as temperature, pH, and the concentration of reactants. For example, in the preparation of silica gels, TEOS is first hydrolyzed in an acidic environment to form silicic acid, which then condenses to form a three - dimensional network structure. In CVD processes, TEOS is vaporized and introduced into the reaction chamber along with other reactant gases. The reaction conditions, such as temperature, pressure, and gas flow rate, need to be carefully controlled to ensure the quality of the deposited thin films.
Case 1: Semiconductor Thin Film Deposition
A semiconductor manufacturing company used our factory - supplied TEOS in a CVD process to deposit silicon dioxide thin films on silicon wafers. By precisely controlling the reaction conditions, they were able to achieve a uniform thin - film thickness with a deviation of less than ± 5%. The deposited thin films had excellent electrical insulation properties, which significantly improved the performance and reliability of the semiconductor devices. The high purity of our TEOS ensured that there were no impurities in the thin films, reducing the risk of device failure.
Case 2: Coating Application
A coating manufacturer incorporated TEOS into their sol - gel coating formulation for glass surfaces. The addition of TEOS improved the hardness of the coating by 30% compared to the original formulation. The coated glass had excellent scratch resistance and anti - reflection properties. In a real - world application, the coated glass was used in solar panels, and it was found that the power conversion efficiency of the solar panels increased by 5% due to the improved light transmission through the anti - reflection coating.
If you have any questions or need further information about our factory - supplied tetraethoxysilane, please feel free to contact us. Our email address is info@vivalr.com, and our phone number is (86) 15866781826. We are committed to providing high - quality products and excellent customer service.
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